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Exact linear admittance of n+-n-n+ semiconductor structuresERANEN, S; SINKKONEN, J.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5447-5448, issn 0163-1829Article

On the unifying admittance calculationSHI-LANG WANG.Journal of the Franklin Institute. 1986, Vol 322, Num 2, pp 73-78, issn 0016-0032Article

The dual RF admittance bridgeGRNO, L.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 2, pp 206-208, issn 0018-9456Article

CALCULATION OF THE FREQUENCY DEPENDENCE OF THE ADMITTANCE OF SCLC DIODES.KASSING R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 107-117; ABS. ALLEM.; BIBL. 13 REF.Article

MEASUREMENT OF ADMITTANCE OF GUNN DIODES IN PASSIVE AND ACTIVE REGIONS OF BIAS VOLTAGEDE WAARD PJ.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 3; PP. 59-60; BIBL. 9 REF.Serial Issue

Bounds of uncertain interference between closely located antennasHIRASAWA, K.IEEE transactions on electromagnetic compatibility. 1984, Vol 26, Num 3, pp 129-133, issn 0018-9375Article

Adaptive balancing compensatorCZARNECKI, L. S; SHIH MIN HSU; GUANGDA CHEN et al.IEEE transactions on power delivery. 1995, Vol 10, Num 3, pp 1663-1669, issn 0885-8977Conference Paper

ADMITTANCE CORRECTION FACTORS FOR GAP EXCITED CYLINDRICAL ANTENNAEWILLIAMSON AG.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 55; NO 3; PP. 441-448; BIBL. 6 REF.Article

TWO TERMINAL NEGATIVE ADMITTANCE USING BJT WITH FETKRISHNA MM.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 53; NO 3; PP. 303-304Article

HILBERT NETWORKS. II. SOME QUALITATIVE PROPERTIES.DOLEZAL V; ZEMANIAN A.1975; S.I.A.M. J. CONTROL; U.S.A.; DA. 1975; VOL. 13; NO 1; PP. 153-161; BIBL. 9 REF.Article

SMALL-SIGNAL ADMITTANCE OF A MAGNETODIODE.PELEIDERER.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 1; PP. 13-24; ABS. ALLEM.; BIBL. 1 P.Article

DUOCONICAL MONOPOLE.AL BADWAIHY KA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 10; PP. 199-201; BIBL. 3 REF.Article

DIE BESTIMMUNG DER LEITWERTE DES GIACOLETTO-ERSATZBILDES VON TRANSISTOREN MIT HILFE VON EINFREQUENTEN ZWEIPOLMESSUNGEN = DETERMINATION DE L'ADMITTANCE DU SCHEMA EQUIVALENT DE GIACOLETTO PAR DES MESURES EN MONTAGE DIPOLE FAITES A UNE SEULE FREQUENCERICHTSCHEID A.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 2; PP. 57-61; ABS. ANGL.; BIBL. 5 REF.Serial Issue

EQUATION GENERALISEE DU BILAN DES PUISSANCES ACTIVES DANS UN OSCILLATEUR SYNCHRONISEFOMIN NN.1977; RADIOTEKHNIKA; S.S.S.R.; DA. 1977; VOL. 32; NO 5; PP. 42-47; BIBL. 11 REF.Article

EXPRESSION FOR DECOUPLING IN MULTIPLE-BEAM ANTENNAS.LEWIN L.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 17; PP. 420-421; BIBL. 2 REF.Article

THE INSULATED MONOPOLE: ADMITTANCE AND JUNCTION EFFECTS. = L'ANTENNE UNIPOLAIRE ISOLEE: ADMITTANCE ET EFFETS DU DISPOSITIF DE JONCTIONKING RWP; MISHRA SR; LEE KM et al.1975; I.E.E.E. TRANS. ANTENNAS PROPAG.; U.S.A.; DA. 1975; VOL. 23; NO 2; PP. 172-177; BIBL. 7 REF.Article

ADMITTANCE CHARACTERISTICS OF LOOP ANTENNA USING MULTI-ELEMENTS.BHATTACHARYYA T.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 1; PP. 14-16; BIBL. 4 REF.Article

CARACTERE INDUCTIF DE L'ADMITTANCE DE SORTIE DES TRANSISTORS DRIFTKUZNETSOV VI; MURAVSKIJ BS; EREMIN SA et al.1972; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1972; VOL. 17; NO 8; PP. 1778-1780; BIBL. 5 REF.Serial Issue

A NONLINEAR INDEFINITE ADMITTANCE MATRIX FOR MODELING ELECTRONIC DEVICES.ARREOLA JI; LINDHOLM FA.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 765-767; BIBL. 11 REF.Article

LE CALCUL DES QUADRIPOLES PAR LES PARAMETRES FLOTTANTS.BENY A.1974; TOUTE ELECTRON.; FR.; DA. 1974; NO 392; PP. 53-57Article

Photoadmittance in amorphous-silicon Schottky diodesDRAZIN, J. P. V; ANDERSON, J. C.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1986, Vol 54, Num 1, pp 19-36, issn 0141-8637Article

Characterization of metallophthalocyanine-metal contacts: electrical properties in a large frequency rangeBOUZID BOUDJEMA; GUILLAUD, G; GAMOUDI, M et al.Journal of applied physics. 1984, Vol 56, Num 8, pp 2323-2329, issn 0021-8979Article

New negative conductance in GaAs n+-n-n+ ballistic diode ―time-dependent computer simulation―AISHIMA, A; FUKUSHIMA, Y.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1889-1892, issn 0021-4922Article

THE ADMITTANCE CHARACTERISTICS OF LONGITUDINAL SHUNT SLOTS IN THE BROAD FACE OF RECTANGULAR WAVEGUIDE.DAS BN; SINHA M.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 1; PP. 32-37; BIBL. 7 REF.Article

A DYNAMIC ADMITTANCE METER BASED ON A VOLTAGE CONTROLLED OSCILLATOR IC.BUDDING RW; STRACKEE L.1975; REV. SCI. INSTRUM.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 210-212; BIBL. 3 REF.Article

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